View STC08IE150HV_1317947.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STC08IE150HV
Emitter Switched Bipolar Transistor ESBT 1500 V - 8 A - 0.10
Features
VCS(ON) 0.8 V
IC 8A
RCS(ON)
High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Very low turn-off cross over time

In compliance with the 2002/93/EC European Directive
Applications

Aux SMPS for three phase mains Sepic PFC
Description
The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.
Order Codes
Part Number STC08IE150HV Marking C08IE150HV Package TO247-4LHV Packaging TUBE
December 2006
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
W
0.10
Internal Schematic Diagram
Rev 2
(R)
PRELIMINARY DATA
1
23
4
TO247-4LHV
1/7
www.st.com 7
1 Absolute Maximum Ratings
STC08IE150HV
1
Table 1.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute Maximum Ratings
Absolute Maximum Ratingsn
Parameter Collector-source voltage (VBS = VGS = 0 V) Base-source voltage (IC = 0, VGS = 0 V) source-base voltage (ic = 0, vgs = 0 v) Gate-source Voltage Collector Current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value 1500 30 17 Unit V V V V A A A A W C C
17
8 24 6 12 208 -40 to 150 150
1.1
Table 2.
Symbol Rthj-case
Thermal Data
Thermal Data
Parameter Thermal resistance junction-case____________________Max Value 0.6 Unit C/W
2/7
STC08IE150HV
2 Electrical Characteristics
2
Table 3.
Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS)
Electrical Characteristics
Electrical Characteristics (TCASE = 25C; unless otherwise specified)
Parameter Collector-source current (V BS = VGS = 0) Base-source current (IC = 0, VGS = 0 V) Source-base current (IC = 0, VGS = 0) Gate-source leakage Test Conditions VCE = 1500V VBS(OS) = 30V VSB(OS) = 17V VGS = 17V VGS = 10V_ IC = 8A _ IB = 1.6A VGS = 10V_ IC = 3A _ IB = 0.3A VGS = 10V_ V CS = 1V_ IC = 8A VGS = 10V _VCS = 1V _IC = 3A VGS = 10V_ IC = 8A_ IB = 1.6A VGS = 10V_ IC = 2A_ IB = 0.3A VBS = V GS ______IB = 250 A VCS =25V _ _ _ _ _ _ f =1MHz VGS=VCB=0V VCS=15V _ _ _ _ _ _ VGS=10V VCB=0V _ _ _ _ _ _ _ IC =1.4A ts tf ts tf INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time VGS =10V_ _ _ _ _ _ RG =47 VClamp =1200V _ _ _ tp =4s IC =4A _ _ _ _ _ _ _ _IB =0.8A VGS =10V_ _ _ _ _ _ RG =47 VClamp =1200V _ _ _ tp =4s IC =4A_ _ _ _ _ _ _ _ IB =0.4A VCC =V Clamp =600V VGS =10V _ _ _ _ _ _ IC =2A IB = 0.4A _ _ _ __ _ _ RG =47 tpeak =500ns _ __ _ _ IBpeak =4A VCC =V Clamp =600V VGS =10V _ _ _ _ _ _ IC =2A IB = 0.4A _ _ _ _ _ _ _RG =47 tpeak =500ns _ _ _ _ _IBpeak =4A RG =47 _ _ _ _ _ _ _hFE =5 IC = 8A 1500 V 1.7 V 2.8 V 340 10 ns ns 690 10 ns ns 2 4.5 9 1 0.7 6 11 1.6 1.1 3 810 45.6 2 1.5 4 V V V pF nC Min. Typ. Max. 100 10 100 100 1.5 1.2 Unit
A A A
nA V V
VCS(ON) Collector-source ON voltage hFE DC current gain
VBS(ON) Base-source ON voltage VGS(th) CISS Gate threshold voltage Input capacitance
Q GS(tot) Gate-source charge
Collector-source dynamic VCS(dyn) voltage (500ns)
Collector-source dynamic VCS(dyn) voltage (1s) Maximum collector-source voltage switched without snubber
VCSW
3/7
3 Package mechanical data
STC08IE150HV
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
4/7
STC08IE150HV
3 Package mechanical data
TO247-4LHV MECHANICAL DATA
DIM. A A1 A2 b b2 c D D1 E e e1 L L1 L2 L3 P S
mm. MIN. 4.85 2.20 0.95 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 2.50 18.50 3 3.55 5.50 3.65 10.80 2.80 24 21.50 15.60 15.75 2.50 1.27 1.10 1.30 2.90 0.80 24.15 TYP MAX. 5.15 2.60
7734874
5/7
4 Revision History
STC08IE150HV
4
Revision History
Date 30-Jan-2006 01-Dec-2006
Revision 1 2 Initial release.
Changes
The document has been reformatted
6/7
STC08IE150HV
4 Revision History
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
(c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
7/7

▲Up To Search▲

Price & Availability of STC08IE150HV

	To Download STC08IE150HV Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .